photodiode preliminary rev. 02/06 wavelength infrared miscellaneous parameters t amb = 25c, unless otherwise specified symbol value unit a 7,0 mm2 temperature coefficient t c (i d ) 0,074 1/k t amb -40 to +85 c t stg -40 to +100 c optical and electrical characteristics t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f = 10 ma v f 0,6 v breakdown voltage i r = 10 a v r 518 v dark current v r = 5 v i d 5,0 30,0 na responsivity at 1300 nm v r = 0 v s 0,9 a/w sensitivity range at 20% v r = 5 v min , max 800 1700 nm spectral bandwidth at 50% v r = 5 v ? 0.5 780 nm dark resistance v r = 10 mv r d 15 30 m ? noise equivalent power = 1300 nm nep 4.6x10 -14 whz 1/2 junction capacitance v r = 0 v c j 1000 1300 pf photo current at 1300 nm* v r = 0 v e e = 1mw/cm2 i ph 15 a * for information only note: all measurements carried out with calibrated equipment epd-1300-0-3.0 type parameter case to-39 technology ingaas/inp planar active area storage temperature range operating temperature range test onditions ingaas-photodiode mounted in to-39 standard package . high spectral sensitivity in the infrared range (nir , swir) due to large active area. description applications optical communications, safety equipment, light barriers 5,90 0,1 8,13 0,1 13,5 1,0 0 , 4 5 2,00 0,05 ?9,14 ?7,62 9 , 9 0 0 ,1 4 5 , 0 0 0 ,8 0 0 , 05 3,25 0,1 chip location chip location anode elc-70
photodiode preliminary rev. 02/06 epd-1300-0-3.0 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 typical optical responsivity (a/w) w avelength [nm]
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